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H7N0602AB
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0068-0200Z Rev.2.00 Oct.30.2003
Features
* Low on-resistance RDS(on) = 4.1 m typ. * Low drive current * Available for 4.5 V gate drive
Outline
TO-220AB
D
G
S
1 2 3
1. Gate 2. Drain (Flange) 3. Source
Rev.2.00, Oct.30.2003, page 1 of 9
H7N0602AB
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR IAP
Note3 Note1
Ratings 60 20 85 340 85 65 362 100 150 -55 to +150
Unit V V A A A A mJ W C C
EARNote3 Pch Tch Tstg
Note2
Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50
Rev.2.00, Oct.30.2003, page 2 of 9
H7N0602AB
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Symbol Min V(BR)DSS 60 Typ -- -- -- -- -- 4.1 6.2 120 9000 1000 470 140 30 30 55 290 140 50 0.95 45 Max -- -- 10 10 2.5 5.2 9.0 -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns IF = 85 A, VGS = 0 IF = 85 A, VGS = 0 diF/dt = 100 A/s Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 mA, VDS = 10 VNote1 ID = 45 A, VGS = 10 VNote1 ID = 45 A, VGS = 4.5 VNote1 ID = 45 A, VGS = 10 VNote1 VDS = 10 V VGS = 0 f = 1 MHz VDD = 25 V VGS = 10 V ID = 85 A VGS = 10 V, ID = 45 A RL = 0.67 Rg = 4.7
Gate to source breakdown Voltage V(BR)GSS 20 Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf trr IGSS IDSS VGS(off) RDS(on) -- -- 1.5 -- -- 70 -- -- -- -- -- -- -- -- -- -- -- --
Body-drain diode forward voltage VDF Body-drain diode reverse recovery time Notes: 1. Pulse test
Rev.2.00, Oct.30.2003, page 3 of 9
H7N0602AB
Main Characteristics
Power vs. Temperature Derating 200
Pch (W) (A)
Maximum Safe Operation Area 1000 300 100
ID
1
10
10
0
150
Drain Current
s s
Channel Dissipation
30 100 10 3
DC Operation (Tc = 25C)
s m
PW = 10 ms (1 shot)
80
1 Operation in 0.3
this area is limited by RDS(on)
0
50
100
150 Tc (C)
200
0.1 Ta = 25C 0.1 0.3 1
3
10
30 VDS
100 (V)
Case Temperature
Drain to Source Voltage
Typical Output Characteristics 200 VGS = 10 V
(A)
Typical Transfer Characteristics 200 VDS = 10 V Pulse Test
Pulse Test
(A) ID Drain Current
160
6.0 V
4.5 V
160
ID
120
4.0 V
120
Drain Current
80 3.5 V 40 3V 0 2 4 6 Drain to Source Voltage 8 VDS 10 (V)
80
40
Tc = 75C 25C -25C
0
1
2
3
4 VGS
5 (V)
Gate to Source Voltage
Rev.2.00, Oct.30.2003, page 4 of 9
H7N0602AB
Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current
Drain to Source Saturation Voltage VDS(on) (V)
Drain to Source on State Resistance RDS(on) (m)
500
Pulse Test
100
Pulse Test
30
400
300 ID = 50 A
10
200
VGS = 4.5 V
100
20 A 10 A 16 20 VGS (V)
3
10 V
0
12 4 8 Gate to Source Voltage
1
1
3
30 100 300 1000 10 Drain Current ID (A)
Drain to Source on State Resistance RDS(on) (m)
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16
Forward Transfer Admittance vs. Drain Current 1000 VDS = 10 V Pulse Test 300 100 25C 30 75C 10 3 1 1 3 10 30 100 300 1000 (A) Tc = -25C
12 50 A 8 10, 20 A 4.5 V 4 0 -50 VGS = 10 V 0 50 10, 20, 50 A 100 Tc 150 (C) 200
Case Temperature
Drain Current ID
Rev.2.00, Oct.30.2003, page 5 of 9
H7N0602AB
Body-Drain Diode Reverse Recovery Time 1000 100000 Typical Capacitance vs. Drain to Source Voltage
Reverse Recovery Time trr (ns)
Capacitance C (pF)
300 100 30 10 3 1 0.1
di / dt = 100 A / s VGS = 0, Ta = 25C
30000 10000 3000 1000 Coss 300 100 0 VGS = 0 f = 1 MHz Ciss
Crss 50 (V)
0.3 1 3 10 30 100 Reverse Drain Current IDR (A)
10 20 30 40 Drain to Source Voltage VDS
Dynamic Input Characteristics
Switching Characteristics
VDS (V)
ID = 85 A VGS VDS VDD = 50 V 25 V 10 V
(V)
100
20
1000 tf 300 tr td(off) td(on) tf
Switching Time t (ns)
80
16
VGS Gate to Source Voltage
Drain to Source Voltage
100
60
12
30 tr 10 VGS = 10 V, VDD = 30 V 3 PW = 5 s, duty < 1 % Rg = 4.7 1 0.1 0.3 3 10 1 Drain Current ID
40
8
20
VDD = 50 V 25 V 10 V 40 80 120 160 Gate Charge Qg (nc)
4 0 200
0
30 (A)
100
Rev.2.00, Oct.30.2003, page 6 of 9
H7N0602AB
Reverse Drain Current vs. Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs. Channel Temperature Derating 500 IAP = 65 A VDD = 25 V duty < 0.1 % Rg > 50
200
(A)
Reverse Drain Current
IDR
160
10 V
400
120
300
80
5V VGS = 0, -5 V Pulse Test
200
40
100 0 25
0
0.4
0.8
1.2
1.6 VSD
2.0 (V)
Source to Drain Voltage
50 75 100 125 Channel Temperature Tch (C)
150
Avalanche Test Circuit EAR =
Avalanche Waveform 1 2 * L * I AP * 2 VDSS VDSS - V DD
V DS Monitor
L I AP Monitor
V (BR)DSS I AP VDD ID V DS
Rg Vin 15 V
D. U. T
50 0 VDD
Rev.2.00, Oct.30.2003, page 7 of 9
H7N0602AB
Normalized Transient Thermal Impedance vs. Pulse Width 3
Normalized Transient Thermal Impedance s (t)
Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 1.25C/ W, Tc = 25C
PDM
0.03
D=
PW T
0.0
1
PW T
0.01 10
100
1m
10 m Pulse Width PW (S)
100 m
1
10
Switching Time Test Circuit
Waveform
Vin Monitor Rg D.U.T. RL
Vout Monitor Vin Vout 10% 10% 90% td(on) tr 90% td(off)
90%
10%
Vin 10 V
V DS = 30V
tf
Rev.2.00, Oct.30.2003, page 8 of 9
H7N0602AB
Package Dimensions
As of January, 2003
Unit: mm
11.5 Max
2.79 0.2
10.16 0.2 9.5 8.0 3.6 -0.08
+0.1
4.44 0.2 1.26 0.15
6.4
+0.2 -0.1
18.5 0.5
15.0 0.3
1.27
2.7 Max
14.0 0.5
1.5 Max
7.8 0.5
0.76 0.1
2.54 0.5
2.54 0.5
0.5 0.1
Package Code JEDEC JEITA Mass (reference value)
TO-220AB Conforms Conforms 1.8 g
Rev.2.00, Oct.30.2003, page 9 of 9
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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